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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD357 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 100V(Min) *Good Linearity of hFE *Complement to Type 2SB527 APPLICATIONS *Designed for AF high power dirver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE 110 100 5 0.8 1 10 UNIT V .cn mi e V V IC Collector Current-Continuous Collector Power Dissipation @ Ta=25 A PC Collector Power Dissipation @ TC=25 TJ Junction Temperature W 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD357 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= 100 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 110 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 0.3A; IB= 30mA 1.0 V VBE(on) Base-Emitter On Voltage IC= 50mA; VCE= 4V ICBO Collector Cutoff Current ICEO Collector Cutoff Current IEBO Emitter Cutoff Current hFE DC Current Gain hFE Classifications C 55-110 D 90-180 w w E 150-300 w. sem isc VCB= 25V; IE= 0 VCE= 100V; RBE= VEB= 5V; IC= 0 IC= 0.3A; VCE= 4V .cn i 55 0.7 V 10 A 1 mA 10 A 300 isc Websitewww.iscsemi.cn 2 |
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